? 2018 ixys corporation, all rights reserved ds99973b(7/18) trencht2 tm power mosfet n-channel enhancement mode avalanche rated IXTA120N04T2 ixtp120n04t2 v dss = 40v i d25 = 120a r ds(on) ? ? ? ? ? 6.1m ? ? ? ? ? features ? international standard packages ? avalanche rated ? low package inductance ? fast intrinsic rectifier 175c operating temperature ? high current handling capability ? rohs compliant ? high performance trench technology for extremely low r ds(on) advantages ? high power density ? easy to mount ? space savings applications ? automotive engine control ? synchronous buck converter (for notebook systempower & general purpose point & load) ? dc/dc converters ? high current switching applications ? power train management ? ? distributed power architecture symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 40 v v gs(th) v ds = v gs , i d = 250 ? a 2.0 4.0 v i gss v gs = ? 20v, v ds = 0v ???????????? 100 na i dss v ds = v dss , v gs = 0v 2 ? a t j = 150 ? c 50 ?? a r ds(on) v gs = 10v, i d = 25a, notes 1 & 2 6.1 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c40 v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 40 v v gsm transient ? 20 v i d25 t c = 25 ? c 120 a i dm t c = 25 ? c, pulse width limited by t jm 360 a i a t c = 25 ? c50 a e as t c = 25 ? c 400 mj p d t c = 25 ? c 200 w t j -55 ... +175 ?? c t jm 175 ?? c t stg -55 ... +175 ?? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb m d mounting torque (to-220) 1.13 / 10 nm/lb.in weight to-263 2.5 g to-220 3.0 g g = gate d = drain s = source tab = drain to-263 (ixta) g s d (tab) to-220 (ixtp) d (tab) s g d
ixys reserves the right to change limits, test conditions, and dimensions. IXTA120N04T2 ixtp120n04t2 symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 28 47 s c iss 3240 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 557 pf c rss 140 pf t d(on) 14 ns t r 8 ns t d(off) 16 ns t f 11 ns q g(on) 58 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i dss 17 nc q gd 10 nc r thjc 0.75 ? c/w r thcs to-220 0.50 ? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. i s v gs = 0v 120 a i sm repetitive, pulse width limited by t jm 480 a v sd i f = 60a, v gs = 0v, note 1 1.2 v t rr 35 ns i rm 1.6 a q rm 28 nc ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 i f = 60a, v gs = 0v, -di/dt = 100a/ ? s, v r = 20v resistive switching times v gs = 10v, v ds = 20v, i d = 60a r g = 5 ? (external) notes: 1. pulse test, t ? 300 ? s; duty cycle, d ?? 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. to-220 outline 1 - gate 2,4 - drain 3 - source e1 e a d1 d q l1 op h1 a1 l a2 d2 e c e1 e1 3x b2 e 3x b ejector pin to-263 outline 1 - gate 2,4 - drain 3 - source c2 a h 1 b d e d1 e1 b2 l2 l1 2 3 4 l3 a2 a1 e c e 0 ??? 0.43 [11.0] 0.66 [16.6] 0.06 [1.6] 0.10 [2.5] 0.20 [5.0] 0.34 [8.7] 60.12 [3.0]
? 2018 ixys corporation, all rights reserved IXTA120N04T2 ixtp120n04t2 fig. 1. output characteristics @ t j = 25 o c 0 20 40 60 80 100 120 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ t j = 25 o c 0 50 100 150 200 250 300 350 012345678 v ds - volts i d - amperes v gs = 15v 8v 5v 6v 7v 10v 9v fig. 3. output characteristics @ t j = 150 o c 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 60a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 120a i d = 60a fig. 5. r ds(on) normalized to i d = 60a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v 15v t j = 175 o c t j = 25 o c fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA120N04T2 ixtp120n04t2 fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 150 o c 25 o c - 40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090100 i d - amperes g f s - siemens 150 o c 25 o c t j = - 40 o c fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 25 o c t j = 150 o c fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 q g - nanocoulombs v gs - volts v ds = 20v i d = 60a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1000 1 10 100 v ds - volts i d - amperes 25 s 100 s 1ms 10ms 100ms dc r ds(on) limit t j = 175 o c t c = 25 o c single pulse
? 2018 ixys corporation, all rights reserved IXTA120N04T2 ixtp120n04t2 fig. 14. resistive turn-on rise time vs. drain current 2 3 4 5 6 7 8 9 10 11 20 30 40 50 60 70 80 90 100 i d - amperes t r - nanoseconds r g = 5 , v gs = 10v v ds = 20v t j = 25 o c t j = 125 o c fig. 15. resistive turn-on switching times vs. gate resistance 0 2 4 6 8 10 12 14 16 4 6 8 101214161820 r g - ohms t r - nanoseconds 10 11 12 13 14 15 16 17 18 t d(on) - nanoseconds t r t d(on) t j = 125 o c, v gs = 10v v ds = 20v i d = 60a, 120a fig. 16. resistive turn-off switching times vs. junction temperature 7 9 11 13 15 17 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 8 12 16 20 24 28 t d(off) - nanoseconds t f t d(off) r g = 5 , v gs = 10v v ds = 20v i d = 60a i d = 120a fig. 17. resistive turn-off switching times vs. drain current 8 10 12 14 16 18 20 22 24 20 30 40 50 60 70 80 90 100 i d - amperes t f - nanoseconds 12 14 16 18 20 22 24 26 28 t d(off) - nanoseconds t f t d(off) r g = 5 , v gs = 10v v ds = 20v t j = 125 o c, 25 o c fig. 13. resistive turn-on rise time vs. junction temperature 1 2 3 4 5 6 7 8 9 10 11 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 , v gs = 10v v ds = 20v i d = 60a i d = 120a fig. 18. resistive turn-off switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 4 6 8 101214161820 r g - ohms t f - nanoseconds 0 10 20 30 40 50 60 70 80 90 t d(off) - nanoseconds t f t d(off) t j = 125 o c, v gs = 10v v ds = 20v i d = 120a i d = 60a
ixys reserves the right to change limits, test conditions, and dimensions. IXTA120N04T2 ixtp120n04t2 ixys ref: t_120n04t2 (v3) 7-9-18-b fig. 19. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w
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